【 Weak current College 】 International Electronics consortium of semiconductor device designation 】

Germany, France, Italy, Netherlands, Belgium and other European countries and Hungary, Romania, Yugoslavia, Poland and other Eastern European countries, most of the International Union of electronic semiconductor discrete devices designation. This naming method consists of four basic parts, the parts of symbols and meanings as follows:
Part i: letter devices use of materials. A-device use material bandgap Eg = 0.6 ~ 1.0eV such as GE, B-device use materials Eg = 1.0 ~ 1.3eV such as Silicon, C-device use materials Eg > 1.3eV such as gallium arsenide, D-device use materials Eg "0.6eV such as Indium antimonide, E-device use composites and materials used in photovoltaic cells
Part II: letter device types and main characteristics. A-detection switch mixing diode, varactor diodes, B-C-low frequency Audion, D-low-frequency power transistors, E-tunnel diode, F-high frequency Audion, G-composite devices and other devices, H-magnetic sensing diodes, K-open magnetic circuit of the Hall element, L-high-frequency power transistors, M-closed magnetic circuit in the Hall elements, P-photodetector, Q-R-emitting devices, small-power Thyristors, S-small power switching valve, T-U-thyristor, high-power switch tube, double diode, X-Y-Z-diodes, Zener diode.
Part three: using numbers or letters and numbers to indicate the registration number. Three digits-representative General semiconductor devices by registration number, one letter and two numbers-represents private registration number of semiconductor devices.
Part IV: letter to the of the same type, the devices for grading. A, B, C, D, E ones-the ones represent the same type of devices as a parameter for the tranche flag.
In addition to the four basic parts, sometimes adding a suffix to distinguish between characteristics or further classification. Common suffixes are as follows:
1 Zener diode type suffix. The first part of the suffix is a letter that stable voltage values allowed range, the letters a, B, C, D, E, respectively, that allow a tolerance of ± 1% or ± 2%, ±5%, ±10%, ± 15%; its suffix is the second part is the number that represents the nominal voltage of integer numerical stability; the suffix of the third part is the letter v, on behalf of the decimal point, letter v after the figure for the regulator hose nominal stability voltage of decimal values.
2. the rectifier diode suffix is a number that represents the device's maximum reverse peak voltage values, units of volts.
3, thyristor type suffix is digital, usually marked maximum reverse peak voltage and maximum reverse turn-off voltage values smaller the voltage value.
Such as: NPN Silicon BDX51-indicates low frequency high power transistor, PNP germanium AF239S-indicates high frequency Audion.